BCR196WE6327HTSA1
TRANS PREBIAS PNP 50V SOT323Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR196WE6327HTSA1 is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 70mA. The transistor offers a transition frequency of 150MHz and a power dissipation capability of 250mW. It is supplied in a PG-SOT323 package, also known as SC-70. The internal base resistors are specified as 47 kOhms (R1) and 22 kOhms (R2), simplifying circuit design by eliminating the need for external biasing resistors. The device exhibits a minimum DC current gain (hFE) of 50 at 5mA collector current and 5V collector-emitter voltage. Applications for this transistor include industrial automation, consumer electronics, and communication systems. It is available on tape and reel for high-volume manufacturing.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 5V |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 70 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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