BCR192WE6327HTSA1
TRANS PREBIAS PNP 50V SOT323Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR192WE6327HTSA1 is a PNP pre-biased bipolar transistor. This device features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It offers a transition frequency of 200MHz with a maximum power dissipation of 250mW. The internal base resistors are specified as R1 (22 kOhms) and R2 (47 kOhms). The transistor type is PNP - Pre-Biased, and it is supplied in the PG-SOT323 package for surface mounting. This component is often utilized in industrial automation, consumer electronics, and automotive applications requiring simple switching and amplification circuits. Its low saturation voltage of 300mV @ 500µA, 10mA makes it suitable for low-power signal conditioning. The minimum DC current gain (hFE) is 70 at 5mA, 5V. The component is available on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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