BCR191WH6327XTSA1
TRANS PREBIAS PNP 50V SOT323Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR191WH6327XTSA1 is a PNP pre-biased bipolar junction transistor (BJT). This device features integrated base resistors (R1 = 22 kOhms, R2 = 22 kOhms) for simplified circuit design. It operates with a collector-emitter breakdown voltage (Vce(max)) of 50 V and a maximum collector current (Ic(max)) of 100 mA. The transistor exhibits a minimum DC current gain (hFE) of 50 at 5 mA and 5 V, with a transition frequency (fT) of 200 MHz. Power dissipation is rated at 250 mW. The BCR191WH6327XTSA1 is supplied in a PG-SOT323 (SC-70) surface-mount package, delivered on tape and reel. This component is suitable for applications in consumer electronics and industrial control systems requiring low-power switching and amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 5V |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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