BCR191WE6327HTSA1
TRANS PREBIAS PNP 50V SOT323Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Infineon Technologies BCR191WE6327HTSA1 is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 50 V and a continuous collector current capability of 100 mA. The transistor features integrated base resistors (R1 = 22 kOhms, R2 = 22 kOhms), simplifying circuit design and reducing component count. With a transition frequency of 200 MHz and a maximum power dissipation of 250 mW, it is suitable for general-purpose switching and amplification tasks in consumer electronics and industrial control systems. The device is supplied in a PG-SOT323 package, commonly known as SC-70, on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 5V |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |