BCR183E6359HTMA1
TRANS PREBIAS NPN 50V SOT23Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Infineon Technologies BCR183E6359HTMA1 is an NPN pre-biased bipolar transistor designed for surface mount applications. This component, housed in a PG-SOT23 package, offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It features integrated base resistors, R1 and R2, both rated at 10 kOhms, simplifying circuit design by eliminating the need for external biasing components. The device boasts a transition frequency of 200 MHz and a maximum power dissipation of 200 mW. Qualification to AEC-Q101 standards signifies its suitability for automotive applications, including infotainment systems, advanced driver-assistance systems (ADAS), and body electronics. Its low cutoff current of 100 nA (ICBO) and saturation voltage of 300 mV at 500µA, 10mA contribute to efficient operation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | PG-SOT23 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
BCR 191L3 E6327
TRANS PREBIAS PNP 50V TSLP-3
BCR573E6327HTSA1
TRANS PREBIAS PNP 50V SOT23
BCR198E6433HTMA1
TRANS PREBIAS PNP 50V SOT23
