BCR169WH6327XTSA1
TRANS PREBIAS PNP 50V SOT323Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR169WH6327XTSA1 is a PNP pre-biased bipolar transistor designed for surface mounting. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 200MHz and a maximum power dissipation of 250mW, it incorporates an integrated base resistor (R1) of 4.7 kOhms for simplified biasing. The device exhibits a minimum DC current gain (hFE) of 120 at 5mA and 5V, and a saturation voltage (Vce Sat) of 300mV at 500µA and 10mA. The collector cutoff current (ICBO) is a maximum of 100nA. Supplied in a PG-SOT323 package, this transistor is commonly utilized in industrial automation, consumer electronics, and communication systems. The part is provided in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 5V |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
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