BCR169E6327HTSA1
TRANS PREBIAS PNP 50V SOT23Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR169E6327HTSA1 is a PNP pre-biased bipolar junction transistor designed for surface mount applications. This device features a collector-emitter breakdown voltage of 50V and an emitter-base voltage of 5V, with a collector current capability of up to 100mA. The integrated base resistor, R1, is specified at 4.7 kOhms, facilitating simplified circuit design. With a transition frequency of 200 MHz and a maximum power dissipation of 200 mW, it is suitable for general-purpose switching and amplification in consumer electronics, industrial automation, and communications systems. The TO-236-3, SC-59, SOT-23-3 package is supplied in a Tape & Reel (TR) configuration. Static characteristics include a minimum DC current gain (hFE) of 120 at 5mA collector current and 5V collector-emitter voltage, and a saturation voltage (Vce(sat)) of 300mV at 500µA base current and 10mA collector current. Collector cutoff current (ICBO) is a maximum of 100nA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 5V |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
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