BCR166WH6327XTSA1
TRANS PREBIAS PNP 50V SOT323Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR166WH6327XTSA1 is a PNP pre-biased bipolar junction transistor. This device features integrated base biasing resistors (R1 = 4.7 kO, R2 = 47 kO), simplifying circuit design and reducing component count. It offers a collector-emitter breakdown voltage (Vce) of 50 V and a maximum collector current (Ic) of 100 mA. The transistor exhibits a transition frequency (fT) of 160 MHz and a maximum power dissipation of 250 mW. Packaged in a compact PG-SOT323 (SC-70) surface-mount format, it is supplied on tape and reel. Key parameters include a minimum DC current gain (hFE) of 70 at 5 mA, 5 V, and a saturation voltage (Vce(sat)) of 300 mV at 500 µA, 10 mA. This component is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 160 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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