BCR166B6327HTLA1
TRANS PREBIAS PNP 50V SOT23Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR166B6327HTLA1 is a PNP, pre-biased bipolar transistor designed for surface mount applications. This component operates with a Collector-Emitter Breakdown Voltage (Vce) of 50 V and a maximum Collector Current (Ic) of 100 mA. Featuring integrated base resistors R1 (4.7 kOhms) and R2 (47 kOhms), this device offers a typical DC Current Gain (hFE) of 70 at 5 mA and 5 V, with a transition frequency of 160 MHz. The maximum power dissipation is rated at 200 mW. Packaged in a PG-SOT23 (TO-236-3, SC-59, SOT-23-3) and supplied on tape and reel, the BCR166B6327HTLA1 is suitable for use in industrial automation, automotive, and consumer electronics applications where space-constrained, high-performance switching and amplification are required.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 160 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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