BCR158WE6327HTSA1
TRANS PREBIAS PNP 50V SOT323Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR158WE6327HTSA1 is a PNP pre-biased bipolar junction transistor. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It offers a transition frequency of 200MHz and a maximum power dissipation of 250mW. The device is housed in a PG-SOT323 (SC-70) surface-mount package. Internal base resistance (R1) is specified at 2.2 kOhms and emitter base resistance (R2) at 47 kOhms, facilitating simplified circuit design by eliminating external biasing resistors. Key electrical parameters include a minimum DC current gain (hFE) of 70 at 5mA and 5V, and a saturation voltage (Vce Sat) of 300mV at 500µA and 10mA. This transistor is suitable for applications in consumer electronics and industrial control systems. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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