BCR142B6327HTLA1
TRANS PREBIAS NPN 50V SOT23Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR142B6327HTLA1 is an NPN, pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The transistor exhibits a minimum DC current gain (hFE) of 70 at 5mA collector current and 5V Vce, with a transition frequency of 150 MHz. Internal base resistors of 22 kOhms (R1) and 47 kOhms (R2) are integrated, simplifying circuit design. The device is supplied in a PG-SOT23 package, presented on a tape and reel. This transistor is suitable for applications requiring efficient switching and amplification, commonly found in consumer electronics and industrial control systems. The maximum power dissipation is rated at 200 mW.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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