BCR141E6433HTMA1
TRANS PREBIAS NPN 50V SOT23Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR141E6433HTMA1 is an NPN pre-biased bipolar transistor. This device features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The transition frequency is 130 MHz, with a maximum power dissipation of 250 mW. The BCR141E6433HTMA1 is housed in a PG-SOT23 (TO-236-3, SC-59, SOT-23-3) package, suitable for surface mounting. It includes integrated base resistors (R1 = 22 kOhms) and emitter base resistors (R2 = 22 kOhms). Typical applications include switching and amplification circuits within automotive, industrial, and consumer electronics sectors. The component is supplied on a Tape & Reel (TR) for efficient automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 5V |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 130 MHz |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |