BCR133WE6327HTSA1
TRANS PREBIAS NPN 50V SOT323Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR133WE6327HTSA1 is an NPN pre-biased bipolar transistor. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It offers a transition frequency of 130MHz and a maximum power dissipation of 250mW. The integrated base resistors, R1 and R2, are both specified at 10 kOhms, contributing to a minimum DC current gain (hFE) of 30 at 5mA and 5V. The transistor type is NPN - Pre-Biased, with a Vce saturation of 300mV at 500µA and 10mA. The BCR133WE6327HTSA1 is supplied in a PG-SOT323 package, suitable for surface mounting and delivered on tape and reel. This component is commonly utilized in consumer electronics and industrial control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 130 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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