BCR133E6393HTSA1
TRANS PREBIAS NPN 50V SOT23Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR133E6393HTSA1 is an NPN pre-biased bipolar junction transistor in a PG-SOT23 package. This surface mount component offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It features a transition frequency of 130MHz and a maximum power dissipation of 200mW. The integrated base resistors (R1 = 10 kOhms, R2 = 10 kOhms) simplify circuit design and reduce component count. Typical applications include digital logic interfaces, switching circuits, and amplifier stages in consumer electronics and industrial automation. The device exhibits a minimum DC current gain (hFE) of 30 at 5mA collector current and 5V Vce, with a saturation voltage (Vce Sat) of 300mV at 500µA base current and 10mA collector current. The cutoff current (ICBO) is rated at a maximum of 100nA. This component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 130 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |