BCR129WE6327HTSA1
TRANS PREBIAS NPN 50V SOT323Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR129WE6327HTSA1 is an NPN pre-biased bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This device features an integrated base resistor (R1) of 10 kOhms, simplifying circuit design and reducing component count. With a collector-emitter breakdown voltage (Vce) of 50V and a continuous collector current (Ic) capability of 100mA, it is suitable for moderate power applications. The transistor exhibits a transition frequency (fT) of 150 MHz and a minimum DC current gain (hFE) of 120 at 5mA/5V. Its saturation voltage (Vce(sat)) is specified at 300mV with a base current of 500µA and collector current of 10mA. This component is housed in a compact PG-SOT323 (SC-70) surface-mount package, delivered on tape and reel. Typical applications include consumer electronics, industrial control, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 5V |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 10 kOhms |
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