BCR119WE6327HTSA1
TRANS PREBIAS NPN 50V SOT323Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR119WE6327HTSA1 is an NPN pre-biased bipolar transistor. This device offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It features a transition frequency of 150MHz and a power dissipation of 250mW. The integrated base resistor is specified at 4.7 kOhms. The transistor type is NPN pre-biased, with a minimum DC current gain (hFE) of 120 at 5mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce Sat) is a maximum of 300mV at 500µA base current and 10mA collector current. The component is housed in a PG-SOT323 package, commonly known as SC-70, and is supplied on tape and reel for surface mounting. This transistor is suitable for applications in industrial control, consumer electronics, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 5V |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
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