BCR116WE6327BTSA1
TRANS PREBIAS NPN 50V SOT323Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR116WE6327BTSA1 is an NPN pre-biased bipolar transistor. This single transistor features integrated base resistors (R1 = 4.7 kOhms, R2 = 47 kOhms), simplifying circuit design and reducing component count. It offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The device exhibits a minimum DC current gain (hFE) of 70 at 5 mA collector current and 5 V collector-emitter voltage, with a transition frequency of 150 MHz. Power dissipation is rated at 250 mW. The BCR116WE6327BTSA1 is housed in a PG-SOT323 surface-mount package, provided on tape and reel. Applications include general-purpose switching and amplification, commonly found in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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