BCR112WH6327XTSA1
TRANS PREBIAS NPN 50V SOT323Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR112WH6327XTSA1 is an NPN pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transition frequency is specified at 140MHz, with a maximum power dissipation of 250mW. It incorporates integrated base resistors, R1 and R2, both rated at 4.7 kOhms. The transistor type is NPN, pre-biased, and it is supplied in the PG-SOT323 package. Typical applications include general-purpose switching and amplification circuits, often found in consumer electronics and industrial automation. The DC current gain (hFE) is a minimum of 20 at 5mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 300mV at 500µA base current and 10mA collector current. The package is supplied in a Tape & Reel (TR) configuration.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 5V |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 140 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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