BCR112WE6327BTSA1
TRANS PREBIAS NPN 50V SOT323Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR112WE6327BTSA1 is an NPN pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It operates with a transition frequency of 140 MHz and dissipates a maximum power of 250 mW. The transistor is housed in a PG-SOT323 package, also known as SC-70, and is supplied on a tape and reel. Key specifications include a minimum DC current gain (hFE) of 20 at 5 mA and 5 V, and a Vce saturation of 300 mV at 500 µA and 10 mA. The integrated base resistors are R1 at 4.7 kOhms and R2 at 4.7 kOhms. This device is commonly utilized in industrial automation, consumer electronics, and communication systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 5V |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 140 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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