BCR108WE6327BTSA1
TRANS PREBIAS NPN 50V SOT323Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Infineon Technologies BCR108WE6327BTSA1 is an NPN pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a Collector-Emitter Breakdown Voltage (Vce) of 50V and a maximum Collector Current (Ic) of 100mA. The device exhibits a transition frequency of 170 MHz and a maximum power dissipation of 250mW. It is supplied in the PG-SOT323 package, commonly known as SC-70, and is delivered on a Tape & Reel. Key internal biasing resistors include R1 at 2.2 kOhms and R2 at 47 kOhms, contributing to a minimum DC Current Gain (hFE) of 70 at 5mA collector current and 5V collector-emitter voltage. This transistor is suitable for use in various industrial and consumer electronics applications requiring simplified switching and amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 170 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
Request a Quote
Clients Also Buy
BCR 191L3 E6327
TRANS PREBIAS PNP 50V TSLP-3
BCR573E6327HTSA1
TRANS PREBIAS PNP 50V SOT23
BCR198E6433HTMA1
TRANS PREBIAS PNP 50V SOT23
