BCR 569 E6327
TRANS PREBIAS PNP 50V SOT23Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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The Infineon Technologies BCR-569-E6327 is a PNP pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 500 mA. With a transition frequency of 150 MHz and a power dissipation of 330 mW, it is suitable for use in a variety of electronic circuits. The device is supplied in a PG-SOT23 package, facilitating compact board designs. Key electrical characteristics include a minimum DC current gain (hFE) of 120 at 50mA, 5V, and a saturation voltage (Vce Sat) of 300mV at 2.5mA, 50mA. A base resistor (R1) of 4.7 kOhms is integrated. This transistor finds application in industries such as consumer electronics and industrial automation. The product is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 50mA, 5V |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 330 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 4.7 kOhms |