BCR 512 B6327
TRANS PREBIAS NPN 50V SOT23Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-512-B6327 is an NPN pre-biased bipolar transistor designed for surface mount applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. It offers a transition frequency of 100MHz and a maximum power dissipation of 330mW. The device includes integrated base resistors (R1 = 4.7 kOhms) and emitter base resistors (R2 = 4.7 kOhms), simplifying circuit design. The minimum DC current gain (hFE) is 60 at 50mA and 5V. Supplied in a PG-SOT23 package, this transistor is commonly utilized in industrial automation, consumer electronics, and automotive applications requiring simple switching or amplification functions. The saturation voltage is a maximum of 300mV at 2.5mA base current and 50mA collector current. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 50mA, 5V |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 330 mW |
| Frequency - Transition | 100 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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