BCR 503 B6327
TRANS PREBIAS NPN 50V SOT23Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies NPN Pre-Biased Transistor, part number BCR-503-B6327, is a surface mount component in a PG-SOT23 package. This transistor offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. It features a transition frequency of 100MHz and a maximum power dissipation of 330mW. The integrated base resistors, R1 and R2, are specified at 2.2 kOhms. This component is suitable for applications requiring simple switching or amplification in areas such as consumer electronics and industrial control systems. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 5V |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 330 mW |
| Frequency - Transition | 100 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
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