BCR 199T E6327
TRANS PREBIAS PNP 50V 0.07A SC75Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-199T-E6327 is a PNP, pre-biased bipolar transistor designed for surface mount applications. This component, packaged in SC-75 (SOT-416), offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 70mA. It features a transition frequency of 200MHz and a maximum power dissipation of 250mW. The integrated base resistor (R1) is 47 kOhms, contributing to a minimum DC current gain (hFE) of 120 at 5mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce Sat) is specified at a maximum of 300mV for 500µA base current and 10mA collector current. Applications for this device include industrial automation and consumer electronics. This part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 5V |
| Supplier Device Package | PG-SC75-3D |
| Current - Collector (Ic) (Max) | 70 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 47 kOhms |
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