BCR 199L3 E6327
TRANS PREBIAS PNP 50V TSLP-3Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-199L3-E6327 is a PNP pre-biased bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 70 mA. It operates with a transition frequency of 200 MHz and a maximum power dissipation of 250 mW. The internal base resistor is specified at 47 kOhms, contributing to its pre-biased functionality. The device exhibits a minimum DC current gain (hFE) of 120 at 5 mA collector current and 5 V collector-emitter voltage. Saturation voltage (Vce(sat)) is a maximum of 300 mV at 500 µA base current and 10 mA collector current. The collector cutoff current (ICBO) is a maximum of 100 nA. Supplied in a PG-TSLP-3-4 package, this transistor is commonly utilized in automotive and industrial control systems. It is provided in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 5V |
| Supplier Device Package | PG-TSLP-3-4 |
| Current - Collector (Ic) (Max) | 70 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 47 kOhms |
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