BCR 198T E6327
TRANS PREBIAS PNP 50V 0.07A SC75Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies' BCR-198T-E6327 is a PNP pre-biased bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a continuous collector current of up to 70 mA. It offers a transition frequency of 190 MHz and a maximum power dissipation of 250 mW. The device incorporates integrated base resistors (R1 = 47 kOhms) and emitter base resistors (R2 = 47 kOhms), simplifying circuit design. Packaged in a PG-SC75-3D (SC-75, SOT-416) case and supplied on tape and reel, it is suitable for use in automotive and industrial control systems. The minimum DC current gain (hFE) is 70 at 5 mA collector current and 5 V collector-emitter voltage.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-SC75-3D |
| Current - Collector (Ic) (Max) | 70 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 190 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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