BCR 196L3 E6327
TRANS PREBIAS PNP 50V TSLP-3Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Infineon Technologies BCR-196L3-E6327 is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications within a PG-TSLP-3-4 package. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 70mA. It offers a minimum DC current gain (hFE) of 50 at 5mA collector current and 5V collector-emitter voltage, with a transition frequency of 150MHz. The transistor includes integrated base resistors R1 (47 kOhms) and R2 (22 kOhms), simplifying circuit design. The maximum power dissipation is 250mW, and it exhibits a Vce saturation of 300mV at 500µA base current and 10mA collector current. This device is commonly employed in voltage regulation circuits, switching applications, and digital logic interfaces across various industrial and consumer electronics sectors. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 5V |
| Supplier Device Package | PG-TSLP-3-4 |
| Current - Collector (Ic) (Max) | 70 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
Request a Quote
Clients Also Buy
BCR198E6433HTMA1
TRANS PREBIAS PNP 50V SOT23
BCR148WE6327BTSA1
TRANS PREBIAS NPN 50V SOT323
BCR166E6433HTMA1
TRANS PREBIAS PNP 50V SOT23
