BCR 196F E6327
TRANS PREBIAS PNP 50V TSFP-3Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-196F-E6327 is a PNP - Pre-Biased Bipolar Junction Transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of up to 50 V and a maximum collector current of 70 mA. The integrated base resistors, R1 at 47 kOhms and R2 at 22 kOhms, facilitate simplified circuit design and reduce component count. With a transition frequency of 150 MHz and a minimum DC current gain (hFE) of 50 at 5 mA collector current and 5 V collector-emitter voltage, the BCR-196F-E6327 is suitable for various switching and amplification circuits. The transistor's saturation voltage (Vce Sat) is specified at a maximum of 300 mV at 500 µA base current and 10 mA collector current. Packaged in a PG-TSFP-3 (SOT-723) suitable for high-volume manufacturing, this device is commonly found in industrial automation, consumer electronics, and automotive applications. The component is supplied in Tape & Reel (TR) packaging with a maximum power dissipation of 250 mW.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 5V |
| Supplier Device Package | PG-TSFP-3 |
| Current - Collector (Ic) (Max) | 70 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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