BCR 192T E6327
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-192T-E6327 is a PNP pre-biased bipolar junction transistor designed for surface mount applications. Featuring integrated base resistors, this component simplifies circuit design by eliminating the need for external biasing components. The transistor offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a transition frequency of 200MHz. Power dissipation is rated at 250mW. The device is supplied in a PG-SC75-3D package (SC-75, SOT-416) and comes on tape and reel. Typical applications include digital logic interfacing and general-purpose switching in consumer electronics and industrial automation. The integrated base resistors are specified as R1 (Base) at 22 kOhms and R2 (Emitter Base) at 47 kOhms.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-SC75-3D |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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