BCR 191F E6327
TRANS PREBIAS PNP 50V TSFP-3Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-191F-E6327 is a PNP pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It offers a transition frequency of 200 MHz and a power dissipation of 250 mW. The device is supplied in a PG-TSFP-3 package, equivalent to SOT-723, and comes on a tape and reel. Key specifications include a minimum DC current gain (hFE) of 50 at 5 mA collector current and 5 V Vce. The base resistance (R1) and emitter base resistance (R2) are both 22 kOhms. This pre-biased transistor is suitable for use in consumer electronics, industrial control, and automotive applications where simplified circuit design and reduced component count are beneficial.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 5V |
| Supplier Device Package | PG-TSFP-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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