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BCR 189F E6327

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BCR 189F E6327

TRANS PREBIAS PNP 50V TSFP-3

Manufacturer: Infineon Technologies

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Infineon Technologies BCR-189F-E6327 is a PNP pre-biased bipolar junction transistor. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 200MHz and a maximum power dissipation of 250mW, it is suitable for applications requiring moderate signal amplification and switching. The device includes an integrated base resistor (R1) of 22 kOhms, simplifying circuit design. It is provided in a PG-TSFP-3 (SOT-723) surface mount package on a tape and reel for automated assembly. This transistor type is commonly utilized in consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-723
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 5mA, 5V
Supplier Device PackagePG-TSFP-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max250 mW
Frequency - Transition200 MHz
Resistor - Base (R1)22 kOhms

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