BCR 185T E6327
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies PNP Pre-Biased Bipolar Transistor (BJT), BCR-185T-E6327. This surface mount device features a PG-SC75-3D package (SC-75, SOT-416) and is supplied on tape and reel. It offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The transistor exhibits a transition frequency of 200 MHz and a maximum power dissipation of 250 mW. Integrated base resistors include R1 at 10 kOhms and R2 at 47 kOhms, providing a minimum DC current gain (hFE) of 70 at 5 mA and 5 V. Collector cutoff current is a maximum of 100 nA (ICBO). Typical applications include general switching and amplification circuits within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-SC75-3D |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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