BCR 185L3 E6327
TRANS PREBIAS PNP 50V TSLP-3Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies PNP Pre-Biased Bipolar Transistor, BCR-185L3-E6327, is a surface mount device in a PG-TSLP-3-4 package. This transistor offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It features integrated base resistors with values of 10 kOhms (R1) and 47 kOhms (R2), simplifying circuit design. The BCR-185L3-E6327 exhibits a minimum DC current gain (hFE) of 70 at 5mA and 5V, with a transition frequency of 200 MHz. It is suitable for applications requiring a pre-biased PNP transistor, including consumer electronics and industrial control systems, with a maximum power dissipation of 250mW. The device is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-TSLP-3-4 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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