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BCR 185F E6327

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BCR 185F E6327

TRANS PREBIAS PNP 50V TSLP-3

Manufacturer: Infineon Technologies

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Infineon Technologies BCR-185F-E6327 is a PNP pre-biased bipolar transistor. This device operates with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features a transition frequency of 200 MHz and a power dissipation of 250mW. The internal base resistors are R1 at 10 kOhms and R2 at 47 kOhms, providing a typical DC current gain (hFE) of 70 at 5mA and 5V. Saturation voltage (Vce Sat) is 300mV at 500µA base current and 10mA collector current. The transistor is housed in a PG-TSLP-3 surface mount package and supplied on tape and reel. This component is commonly utilized in consumer electronics and industrial automation applications requiring compact, integrated switching solutions.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-101, SOT-883
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA, 5V
Supplier Device PackagePG-TSLP-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max250 mW
Frequency - Transition200 MHz
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)47 kOhms

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