BCR 183T E6327
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-183T-E6327 is a PNP pre-biased bipolar junction transistor featuring a collector-emitter breakdown voltage of 50 V and a continuous collector current capability of 100 mA. This device offers a transition frequency of 200 MHz and a maximum power dissipation of 250 mW. It is supplied in a PG-SC75-3D package, which corresponds to the SC-75 or SOT-416 surface mount footprint. Integrated base resistors of 10 kOhms (R1) and 10 kOhms (R2) are included, simplifying circuit design. The transistor exhibits a minimum DC current gain (hFE) of 30 at 5 mA collector current and 5 V collector-emitter voltage. Saturation voltage (Vce Sat) is specified at a maximum of 300 mV for 500 µA base current and 10 mA collector current. The component is available on a tape and reel for automated assembly. Applications include general-purpose switching and amplification in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | PG-SC75-3D |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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