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BCR 183L3 E6327

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BCR 183L3 E6327

TRANS PREBIAS PNP 50V TSLP-3

Manufacturer: Infineon Technologies

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Infineon Technologies BCR-183L3-E6327 is a PNP pre-biased bipolar transistor designed for surface mount applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 200MHz and a maximum power dissipation of 250mW, it is suitable for high-frequency switching and amplification tasks. The internal base resistors are specified at 10kO for both R1 and R2, providing a guaranteed DC current gain (hFE) of a minimum of 30 at 5mA collector current and 5V Vce. Saturation voltage (Vce) is a maximum of 300mV at 500µA base current and 10mA collector current. The device is supplied in a PG-TSLP-3-4 package, commonly known as SC-101 or SOT-883, presented on a tape and reel. This transistor is utilized across various industries, including automotive and industrial control systems, for its reliable pre-biased configuration.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-101, SOT-883
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Supplier Device PackagePG-TSLP-3-4
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max250 mW
Frequency - Transition200 MHz
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms

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