BCR 183 B6327
TRANS PREBIAS PNP 50V SOT23Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies PNP Pre-Biased Transistor, BCR-183-B6327, is designed for applications requiring simplified transistor biasing. This SOT-23 packaged device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The integrated base resistors (R1 = 10 kOhms, R2 = 10 kOhms) provide a fixed bias point, simplifying circuit design and reducing component count. With a transition frequency of 200MHz and a maximum power dissipation of 200mW, it is suitable for general-purpose switching and amplification tasks within the consumer electronics and industrial automation sectors. The transistor exhibits a minimum DC current gain (hFE) of 30 at 5mA and 5V, with a saturation voltage of 300mV at 500µA and 10mA. The device is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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