BCR 179T E6327
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-179T-E6327 is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transistor exhibits a transition frequency of 150MHz and a maximum power dissipation of 250mW. It is supplied in the PG-SC75-3D package, also known as SC-75 or SOT-416, on tape and reel. The integrated base resistor (R1) is 10kOhms. Key parameters include a minimum DC current gain (hFE) of 120 at 5mA collector current and 5V collector-emitter voltage, and a Vce saturation of 300mV at 500µA base current and 10mA collector current. Collector cutoff current (ICBO) is specified at 100nA. This device finds application in various industrial and consumer electronics, including power management and signal conditioning circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 5V |
| Supplier Device Package | PG-SC75-3D |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 10 kOhms |
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