BCR 169L3 E6327
TRANS PREBIAS PNP 50V TSLP-3Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-169L3-E6327 is a PNP pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 200MHz and a maximum power dissipation of 250mW, it is suitable for switching and amplification circuits. The integrated base resistor (R1) is 4.7 kOhms, and the device exhibits a minimum DC current gain (hFE) of 120 at 5mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce) is specified at 300mV maximum for 500µA base current and 10mA collector current. The supplier device package is PG-TSLP-3-4, supplied on tape and reel. This transistor is commonly utilized in industrial automation, consumer electronics, and automotive control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 5V |
| Supplier Device Package | PG-TSLP-3-4 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
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