BCR 169F E6327
TRANS PREBIAS PNP 50V TSFP-3Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-169F-E6327 is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistor (R1) is 4.7 kOhms, facilitating simplified circuit design. With a transition frequency of 200 MHz and a maximum power dissipation of 250mW, it is suitable for use in consumer electronics and industrial applications. The device is supplied in a PG-TSFP-3 package, also known as SOT-723, on tape and reel for efficient automated assembly. DC current gain (hFE) is a minimum of 120 at 5mA collector current and 5V Vce. Collector cutoff current (ICBO) is specified at a maximum of 100nA. Saturation voltage (Vce Sat) is a maximum of 300mV at 500µA base current and 10mA collector current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 5V |
| Supplier Device Package | PG-TSFP-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
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