BCR 166T E6327
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies PNP - Pre-Biased Transistor, BCR-166T-E6327. This bipolar transistor features a pre-biased configuration with internal base resistors (R1 = 4.7 kOhms, R2 = 47 kOhms), simplifying circuit design. It offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The device exhibits a minimum DC current gain (hFE) of 70 at 5 mA and 5 V, with a transition frequency of 160 MHz. Maximum power dissipation is 250 mW. The BCR-166T-E6327 is supplied in a PG-SC75-3D package, commonly known as SC-75 or SOT-416, for surface mounting. This component is utilized in industrial automation, consumer electronics, and telecommunications applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-SC75-3D |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 160 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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