BCR 166F E6327
TRANS PREBIAS PNP 50V TSFP-3Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-166F-E6327 is a PNP pre-biased bipolar transistor designed for surface mount applications. This component features integrated base resistors, R1 at 4.7 kOhms and R2 at 47 kOhms, simplifying circuit design by eliminating external biasing components. It offers a collector-emitter breakdown voltage of 50 V and a continuous collector current capability of up to 100 mA. The transistor exhibits a transition frequency of 160 MHz and a minimum DC current gain (hFE) of 70 at 5 mA collector current and 5 V collector-emitter voltage. With a maximum power dissipation of 250 mW, it is suitable for use in consumer electronics and industrial automation applications. The device is supplied in a PG-TSFP-3 package and is available on tape and reel. Collector cutoff current (ICBO) is specified at a maximum of 100 nA. Saturation voltage (Vce) is 300 mV at 500 µA base current and 10 mA collector current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-TSFP-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 160 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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