BCR 162T E6327
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies' BCR-162T-E6327 is a PNP pre-biased bipolar transistor designed for surface mounting in PG-SC75-3D (SC-75, SOT-416) packages. This component offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. Featuring a transition frequency of 200 MHz and a power dissipation of 250 mW, it includes integrated base resistors of 4.7 kOhms (R1) and 4.7 kOhms (R2). The device exhibits a minimum DC current gain (hFE) of 20 at 5 mA collector current and 5 V Vce, with a saturation voltage (Vce Sat) of 300 mV at 500 µA base current and 10 mA collector current. Collector cutoff current (ICBO) is specified at a maximum of 100 nA. This transistor is commonly utilized in industrial automation, consumer electronics, and communication systems requiring compact switching and amplification capabilities. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 5V |
| Supplier Device Package | PG-SC75-3D |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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