BCR 162L3 E6327
TRANS PREBIAS PNP 50V TSLP-3Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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The Infineon Technologies BCR-162L3-E6327 is a PNP, pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a maximum power dissipation of 250mW. It offers a transition frequency of 200MHz and a minimum DC current gain (hFE) of 20 at 5mA, 5V. Key specifications include a collector cutoff current of 100nA (ICBO) and a Vce saturation of 300mV at 500µA, 10mA. The internal base resistance (R1) is 4.7 kOhms and the emitter base resistance (R2) is 4.7 kOhms. The transistor is supplied in a PG-TSLP-3-4 package and is available on tape and reel. This device is commonly utilized in consumer electronics and industrial automation applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 5V |
| Supplier Device Package | PG-TSLP-3-4 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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