BCR 162F E6327
TRANS PREBIAS PNP 50V TSFP-3Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies PNP Pre-Biased Transistor, part number BCR-162F-E6327. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 200MHz and a power dissipation of 200mW, it is suitable for applications requiring efficient switching and signal amplification. The internal base resistors are R1 (4.7 kOhms) and R2 (4.7 kOhms), providing a minimum DC current gain (hFE) of 20 at 5mA collector current and 5V Vce. The transistor is housed in a compact PG-TSFP-3 (SOT-723) surface mount package, supplied in tape and reel. This component is commonly utilized in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 5V |
| Supplier Device Package | PG-TSFP-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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