BCR 158T E6327
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies' BCR-158T-E6327 is a PNP pre-biased bipolar junction transistor. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 200MHz and a maximum power dissipation of 250mW, it is suitable for surface mount applications within the PG-SC75-3D package. The internal base resistors include R1 at 2.2 kOhms and R2 at 47 kOhms, providing a minimum DC current gain (hFE) of 70 at 5mA collector current and 5V Vce. The collector cutoff current (ICBO) is specified at 100nA maximum. This device is utilized in various industrial and consumer electronics applications. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-SC75-3D |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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