BCR 158 B6327
TRANS PREBIAS PNP 50V SOT23Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies PNP Pre-Biased Bipolar Transistor, BCR-158-B6327, offers a 50V collector-emitter breakdown voltage with a maximum collector current of 100mA. This device features an integrated base resistor of 2.2 kOhms and an emitter base resistor of 47 kOhms, simplifying circuit design. With a transition frequency of 200 MHz and a maximum power dissipation of 200 mW, it is suitable for applications requiring efficient signal amplification and switching. The PG-SOT23 package facilitates surface mounting. Typical applications include consumer electronics, industrial automation, and telecommunications. The BCR-158-B6327 provides a minimum DC current gain (hFE) of 70 at 5mA, 5V and a Vce Saturation of 300mV at 500µA, 10mA. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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