BCR 153T E6327
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Infineon Technologies BCR-153T-E6327 is a PNP pre-biased bipolar junction transistor designed for surface-mount applications. This device features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistors, R1 and R2, are both specified at 2.2 kOhms, simplifying circuit design. With a transition frequency of 200MHz and a maximum power dissipation of 250mW, the BCR-153T-E6327 is suitable for use in industrial automation and consumer electronics. The transistor is supplied in a PG-SC75-3D package, equivalent to the SC-75 or SOT-416, and is available in Tape & Reel (TR) packaging. Key electrical parameters include a minimum DC current gain (hFE) of 20 at 20mA/5V and a Vce(sat) of 300mV at 1mA/20mA. Collector cutoff current (ICBO) is a maximum of 100nA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 20mA, 5V |
| Supplier Device Package | PG-SC75-3D |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
Request a Quote
Clients Also Buy
BCR 191L3 E6327
TRANS PREBIAS PNP 50V TSLP-3
BCR573E6327HTSA1
TRANS PREBIAS PNP 50V SOT23
BCR198E6433HTMA1
TRANS PREBIAS PNP 50V SOT23
