BCR 153L3 E6327
TRANS PREBIAS PNP 50V TSLP-3Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-153L3-E6327 is a PNP, pre-biased bipolar junction transistor designed for surface mount applications. This component features a breakdown voltage of 50V and a maximum collector current of 100mA, with a transition frequency of 200MHz. The device is packaged in a PG-TSLP-3-4 (SC-101, SOT-883 equivalent) and supports a maximum power dissipation of 250mW. Internal base resistors, R1 and R2, are both specified at 2.2 kOhms, providing a minimum DC current gain (hFE) of 20 at 20mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce) is a maximum of 300mV at 1mA base current and 20mA collector current. The collector cutoff current (ICBO) is rated at a maximum of 100nA. This transistor is commonly utilized in industrial automation, consumer electronics, and communication systems. The BCR-153L3-E6327 is supplied on a Tape & Reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 20mA, 5V |
| Supplier Device Package | PG-TSLP-3-4 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
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