BCR 153F E6327
TRANS PREBIAS PNP 50V TSFP-3Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-153F-E6327 is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mounting. This device features a breakdown voltage (Vce) of 50V and a maximum collector current (Ic) of 100mA. With a transition frequency of 200MHz and a maximum power dissipation of 250mW, it is suitable for applications requiring fast switching and moderate current handling. The integrated base resistors, R1 (2.2 kOhms) and R2 (2.2 kOhms), simplify circuit design and reduce component count. The transistor exhibits a minimum DC current gain (hFE) of 20 at 20mA and 5V. Its saturation voltage (Vce Sat) is a maximum of 300mV at 1mA base current and 20mA collector current. This component is often utilized in industrial automation, consumer electronics, and communication systems. The device is supplied in a PG-TSFP-3 (SOT-723) package, presented on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 20mA, 5V |
| Supplier Device Package | PG-TSFP-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
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